2SC2859 0.5a , 35v npn plastic-encapsulate transistor elektronische bauelemente 14-mar-2011 rev. a page 1 of 1 http://www.secosgmbh.com/ any changes of specification will not be informed individually. ? ? base ? ? emitte r collector ? ? rohs compliant product a suffix of ?-c? specifies halogen & lead-free features ? excellent h fe linearity ? switching applications classification of h fe (1) product-rank 2SC2859-o 2SC2859-y 2SC2859-gr range 70~140 120~240 200~400 marking wo wy wg package information package mpq leadersize sot-23 3k 7? inch absolute maximum ratings (t a = 25 c unless otherwise specified) parameter symbol ratings unit collector to base voltage v cbo 35 v collector to emitter voltage v ceo 30 v emitter to base voltage v ebo 5 v collector current - continuous i c 500 ma collector power dissipation p c 150 mw thermal resistance from junction to ambient r ja 833 c / w junction, storage temperature t j , t stg 150, -55~150 c electrical characteristics (t a = 25 c unless otherwise specified) parameter symbol min. typ. max. unit test condition collector to base breakdown voltage v (br)cbo 35 - - v i c =100 a, i e =0 collector to emitter breakdown voltage v (br)ceo 30 - - v i c =1ma, i b =0 emitter to base br eakdown voltage v (br)ebo 5 - - v i e =100 a, i c =0 collector cut-off current i cbo - - 0.1 a v cb =35v, i e =0 emitter cut-off current i ebo - - 0.1 a v eb =5v, i c =0 dc current gain h fe (1) 70 - 400 v ce =1v, i c =100ma h fe (2) 25 - 70 v ce =6v, i c =400ma collector to emitter saturation voltage v ce(sat) - - 0.25 v i c =100ma, i b =10ma base to emitter voltage v be - - 1 v v ce =1v, i c =100ma transition frequency f t - 300 - mhz v ce =6v, i c =20ma collector output capacitance c ob - 7 - pf v cb =6v, i e =0, f=1mhz sot-23 top view a l c b d g h j f k e 1 2 3 1 2 3 ref. millimete r ref. millimete r min. max. min. max. a 2.80 3.04 g 0.09 0.18 b 2.10 2.55 h 0.45 0.60 c 1.20 1.40 j 0.08 0.177 d 0.89 1.15 k 0.6 ref. e 1.78 2.04 l 0.89 1.02 f 0.30 0.50
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